HYG025N04NA1C2 MOSFET Datasheet & Specifications
N-Channel
PDFN-8(5x6)
High-Current
HUAYI
Vds Max
40V
Id Max
190A
Rds(on)
1.8mΩ@10V
Vgs(th)
4V
Quick Reference
The HYG025N04NA1C2 is an N-Channel MOSFET in a PDFN-8(5x6) package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 190A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | PDFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 190A | Max current handling |
| Power Dissipation (Pd) | 130W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 122.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5.744nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HYG019N06LS1C2 | N-Channel | PDFN-8(5x6) | 60V | 210A | 1.6mΩ@10V | 1.5V | HUAYI 📄 PDF |