HYG013N03LS1C2 MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8
Logic-Level
HUAYI
Vds Max
30V
Id Max
150A
Rds(on)
2.8mΩ@4.5V
Vgs(th)
3V
Quick Reference
The HYG013N03LS1C2 is an N-Channel MOSFET in a PDFN5x6-8 package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | PDFN5x6-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 150A | Max current handling |
| Power Dissipation (Pd) | 65W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.8mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 44.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.011nF | Internal gate capacitance |
| Output Capacitance (Coss) | 773pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| AP180N03G | N-Channel | PDFN5x6-8 | 30V | 180A | 1.7mΩ@10V 3.2mΩ@4.5V |
1.7V | ALLPOWER 📄 PDF |
| E060N2P3HL1 | N-Channel | PDFN5x6-8 | 60V | 180A | 2.3mΩ@10V | 2.5V | Existar 📄 PDF |