HY19P03B MOSFET Datasheet & Specifications
P-Channel
TO-263-2L
Logic-Level
HUAYI
Vds Max
30V
Id Max
90A
Rds(on)
8mΩ@4.5V
Vgs(th)
3V
Quick Reference
The HY19P03B is an P-Channel MOSFET in a TO-263-2L package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 90A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | TO-263-2L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 90A | Max current handling |
| Power Dissipation (Pd) | 96W | Max thermal limit |
| On-Resistance (Rds(on)) | 8mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 90nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.787nF | Internal gate capacitance |
| Output Capacitance (Coss) | 461pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||