HXY30N06DF MOSFET Datasheet & Specifications
N-Channel
DFN3X3-8L
Logic-Level
HXY MOSFET
Vds Max
60V
Id Max
30A
Rds(on)
25mΩ@10V
Vgs(th)
2.5V
Quick Reference
The HXY30N06DF is an N-Channel MOSFET in a DFN3X3-8L package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | DFN3X3-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 34.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 25mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 20.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.148nF | Internal gate capacitance |
| Output Capacitance (Coss) | 58.5pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| WSD6035DN33 | N-Channel | DFN3X3-8L | 60V | 40A | 20mΩ@10V | 1.2V | Winsok Semicon 📄 PDF |