HT03N270S MOSFET Datasheet & Specifications

N-Channel SOT-223 Logic-Level R+O
Vds Max
30V
Id Max
8A
Rds(on)
10mΩ@10V;14mΩ@4.5V
Vgs(th)
1.8V

Quick Reference

The HT03N270S is an N-Channel MOSFET in a SOT-223 package, manufactured by R+O. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)8AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))10mΩ@10V;14mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.8VVoltage required to turn on
Gate Charge (Qg)19.4nC@10VSwitching energy
Input Capacitance (Ciss)784pFInternal gate capacitance
Output Capacitance (Coss)109.4pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HT04N200S N-Channel SOT-223 40V 9A 11mΩ@10V
13mΩ@4.5V
1.5V