HSY010N04A MOSFET Datasheet & Specifications
N-Channel
TOLL-8
Logic-Level
HUASHUO
Vds Max
40V
Id Max
396A
Rds(on)
0.85mΩ@10V
Vgs(th)
3V
Quick Reference
The HSY010N04A is an N-Channel MOSFET in a TOLL-8 package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 396A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | TOLL-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 396A | Max current handling |
| Power Dissipation (Pd) | 272W | Max thermal limit |
| On-Resistance (Rds(on)) | 0.85mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 140nC@10V | Switching energy |
| Input Capacitance (Ciss) | 8.805nF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.406nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MPT015N10-T | N-Channel | TOLL-8 | 100V | 480A | 1.12mΩ@10V | 3V | Minos 📄 PDF |