HSU60P03 MOSFET Datasheet & Specifications
P-Channel
TO-252-2
Logic-Level
HUASHUO
Vds Max
30V
Id Max
60A
Rds(on)
7.5mΩ@10V;11mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The HSU60P03 is an P-Channel MOSFET in a TO-252-2 package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | TO-252-2 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 52.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 7.5mΩ@10V;11mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 33nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 3.448nF | Internal gate capacitance |
| Output Capacitance (Coss) | 508pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |