HSCE3031 MOSFET Datasheet & Specifications
P-Channel
DFN-8(3.3x3.3)
Logic-Level
HUASHUO
Vds Max
30V
Id Max
50A
Rds(on)
5.2mΩ@10V;7mΩ@4.5V
Vgs(th)
1.6V
Quick Reference
The HSCE3031 is an P-Channel MOSFET in a DFN-8(3.3x3.3) package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | DFN-8(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 52W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.2mΩ@10V;7mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 60nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.45nF | Internal gate capacitance |
| Output Capacitance (Coss) | 255pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |