HSBB6254 MOSFET Datasheet & Specifications

N-Channel PRPAK3x3-8L Logic-Level HUASHUO
Vds Max
60V
Id Max
22A
Rds(on)
15mΩ@10V
Vgs(th)
2.2V

Quick Reference

The HSBB6254 is an N-Channel MOSFET in a PRPAK3x3-8L package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 22A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHUASHUOOriginal Manufacturer
PackagePRPAK3x3-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)22AMax current handling
Power Dissipation (Pd)25WMax thermal limit
On-Resistance (Rds(on))15mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)13nC@10VSwitching energy
Input Capacitance (Ciss)1.016nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HSBB6066 N-Channel PRPAK3x3-8L 60V 60A 5.2mΩ@10V 2.3V
HUASHUO 📄 PDF
HSBB8066 N-Channel PRPAK3x3-8L 80V 50A 8.7mΩ@10V 2.3V
HUASHUO 📄 PDF