HSBA6256 MOSFET Datasheet & Specifications
N-Channel
PRPAK5x6-8L
Logic-Level
HUASHUO
Vds Max
60V
Id Max
50A
Rds(on)
10mΩ@10V
Vgs(th)
2.3V
Quick Reference
The HSBA6256 is an N-Channel MOSFET in a PRPAK5x6-8L package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | PRPAK5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 10mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.3V | Voltage required to turn on |
| Gate Charge (Qg) | 15nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.27nF | Internal gate capacitance |
| Output Capacitance (Coss) | 478pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |