HSBA4050A MOSFET Datasheet & Specifications

N-Channel PRPAK5x6-8L High-Current HUASHUO
Vds Max
40V
Id Max
110A
Rds(on)
2.2mΩ@10V
Vgs(th)
4V

Quick Reference

The HSBA4050A is an N-Channel MOSFET in a PRPAK5x6-8L package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 110A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHUASHUOOriginal Manufacturer
PackagePRPAK5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)110AMax current handling
Power Dissipation (Pd)100WMax thermal limit
On-Resistance (Rds(on))2.2mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)52nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)1.719nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HSBA4086 N-Channel PRPAK5x6-8L 40V 230A 2mΩ@4.5V 2.2V
HUASHUO 📄 PDF
HSBA4050 N-Channel PRPAK5x6-8L 40V 140A 2.6mΩ@4.5V 2.5V
HUASHUO 📄 PDF
HSBA8024A N-Channel PRPAK5x6-8L 80V 122A 6.5mΩ@10V 4V
HUASHUO 📄 PDF
HSBA045N10 N-Channel PRPAK5x6-8L 100V 120A 6mΩ@10V 4V
HUASHUO 📄 PDF