HSBA1119 MOSFET Datasheet & Specifications
P-Channel
PRPAK5x6-8L
Logic-Level
HUASHUO
Vds Max
12V
Id Max
210A
Rds(on)
1.6mΩ@4.5V
Vgs(th)
1V
Quick Reference
The HSBA1119 is an P-Channel MOSFET in a PRPAK5x6-8L package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 12V and a continuous drain current of 210A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | PRPAK5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 210A | Max current handling |
| Power Dissipation (Pd) | 110W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.6mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 170nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||