HSBA087N15 MOSFET Datasheet & Specifications
N-Channel
PRPAK-8(5x6)
High-Current
HUASHUO
Vds Max
150V
Id Max
100A
Rds(on)
7.5mΩ@10V
Vgs(th)
3.6V
Quick Reference
The HSBA087N15 is an N-Channel MOSFET in a PRPAK-8(5x6) package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | PRPAK-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 150V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 150W | Max thermal limit |
| On-Resistance (Rds(on)) | 7.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.6V | Voltage required to turn on |
| Gate Charge (Qg) | 39nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.98nF | Internal gate capacitance |
| Output Capacitance (Coss) | 695pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||