HSBA075N04 MOSFET Datasheet & Specifications
N-Channel
PRPAK-8(5x6)
Logic-Level
HUASHUO
Vds Max
40V
Id Max
255A
Rds(on)
0.75mΩ@10V
Vgs(th)
1.5V
Quick Reference
The HSBA075N04 is an N-Channel MOSFET in a PRPAK-8(5x6) package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 255A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | PRPAK-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 255A | Max current handling |
| Power Dissipation (Pd) | 200W | Max thermal limit |
| On-Resistance (Rds(on)) | 0.75mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 125nC@10V | Switching energy |
| Input Capacitance (Ciss) | 6.309nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.622nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||