HP8ME5TB1 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
HSOP-8
Logic-Level
ROHM
Vds Max
100V
Id Max
8.5A;8A
Rds(on)
148mΩ@10V;210mΩ@10V
Vgs(th)
1V
Quick Reference
The HP8ME5TB1 is a Dual N/P-Channel in a HSOP-8 package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 8.5A;8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | HSOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8.5A;8A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| On-Resistance (Rds(on)) | 148mΩ@10V;210mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 2.9nC@10V;19.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 90pF;590pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF;37pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||