HMMDT55517F Transistor Datasheet & Specifications
NPNSOT-363General Purpose
VCEO
-
Ic Max
160V
Pd Max
-
Gain
-
Quick Reference
The HMMDT55517F is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including - breakdown voltage and 160V continuous collector current. Download the HMMDT55517F datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| VCEO | - | Breakdown voltage |
| IC Max | 160V | Collector current |
| Pd Max | - | Power dissipation |
| Gain | - | DC current gain |
| Frequency | 200mW | Transition speed |
| VCEsat | 100 | Saturation voltage |
| Vebo | 300MHz | Emitter-Base voltage |
| Temp | 200mA | Operating temp |