HMMBT3904WT1G Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-323General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
150mW
Gain
300

Quick Reference

The HMMBT3904WT1G is a NPN bipolar transistor in a SOT-323 package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the HMMBT3904WT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max150mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition speed
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMST4401-7-FNPNSOT-32340V600mA200mW
MMST3904-7-FNPNSOT-32340V200mA200mW
BC817-40W-7NPNSOT-32345V500mA200mW
BC847CW-7-FNPNSOT-32345V100mA200mW
MMST2222A-7-FNPNSOT-32340V600mA200mW
MMST3904NPNSOT-32340V200mA200mW
BC847BW(UMW)NPNSOT-32345V100mA150mW