HIGLD60R190D1 MOSFET Datasheet & Specifications
N-Channel
DFN-8(8x8)
Logic-Level
HXY MOSFET
Vds Max
650V
Id Max
10A
Rds(on)
160mΩ@6V
Vgs(th)
1.6V
Quick Reference
The HIGLD60R190D1 is an N-Channel MOSFET in a DFN-8(8x8) package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 10A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | DFN-8(8x8) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 160mΩ@6V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 2.3nC | Switching energy |
| Input Capacitance (Ciss) | 83pF | Internal gate capacitance |
| Output Capacitance (Coss) | 27pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |