HFMMT591QTA Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPSOT-23General Purpose
VCEO
60V
Ic Max
1A
Pd Max
250mW
Gain
100
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Quick Reference

The HFMMT591QTA is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the HFMMT591QTA datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO60VBreakdown voltage
IC Max1ACollector current
Pd Max250mWPower dissipation
Gain100DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo150MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-FPNPSOT-2360V600mA350mW
BC856ALT1GPNPSOT-2365V100mA225mW
ZXTP2025FTAPNPSOT-2350V5A1.2W
2SA812PNPSOT-2350V100mA300mW
LBC856BLT1GPNPSOT-2365V100mA225mW
LBC807-40LT1GPNPSOT-2345V500mA225mW
MMBT2907APNPSOT-2360V600mA250mW
MMBT2907APNPSOT-2360V600mA250mW
FMMT591TAPNPSOT-2360V1A500mW
View all SOT-23 PNP Transistors ›