HFMMT493TA Datasheet & Equivalents
NPN+PNP
SOT-23
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
1A
Pd Max
250mW
hFE Gain
60
Quick Reference
The HFMMT493TA is a NPN+PNP bipolar junction transistor array in a SOT-23 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 100V and continuous collector current of 1A per channel.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | NPN+PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 250mW | Max thermal limit |
| DC Current Gain (hFE) | 60 | Base signal amplification ratio |
| Transition Frequency (fT) | 150MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 600mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||