HE8050G-D-AB3-R Datasheet & Equivalents

NPN SOT-89 General Purpose UTC
VCEO
25V
Ic Max
1.5A
Pd Max
500mW
hFE Gain
160

Quick Reference

The HE8050G-D-AB3-R is a NPN bipolar junction transistor in a SOT-89 package, manufactured by UTC. It supports a breakdown voltage of 25V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)1.5AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)160Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD1623 NPN SOT-89 25V 1.5A 160 1W
2SC4672R NPN SOT-89 25V 1.5A 120 1W
2SC5053R NPN SOT-89 25V 1.5A 200 1W
PXT8050(RANGE:200-350) NPN SOT-89 25V 1.5A 200 500mW
PXT8050 NPN SOT-89 25V 1.5A 120 500mW
PXT8050 NPN SOT-89 25V 1.5A 200 500mW
SS8050 NPN SOT-89 25V 1.5A 200 500mW
PXT8050 NPN SOT-89 25V 1.5A 85 500mW
Guangdong Hot... ๐Ÿ“„ PDF
SS8050 NPN SOT-89 25V 1.5A 85 500mW
GOODWORK ๐Ÿ“„ PDF
2SC2873Y NPN SOT-89 25V 1.5A 70 1W
PXT8050 NPN SOT-89 25V 1.5A 45 625mW
PXT8050 NPN SOT-89 25V 1.5A 350 1W
PXT8050-JSM NPN SOT-89 25V 1.5A 400 500mW
SS8050(SOT89-3L) NPN SOT-89 25V 1.5A 400 500mW
HXY MOSFET ๐Ÿ“„ PDF
PXT8050 NPN SOT-89 25V 1.5A 400 500mW
PXT8050 NPN SOT-89 25V 1.5A 400 500mW
HT(Shenzhen J... ๐Ÿ“„ PDF
PXT8050 NPN SOT-89 25V 1.5A 400 500mW
2SD2153 NPN SOT-89 25V 2A 2700 500mW
KTC4375Y NPN SOT-89 30V 1.5A 320 500mW
2DD2679-13 NPN SOT-89 30V 2A 270 900mW