HD504N075SG MOSFET Datasheet & Specifications
N-Channel
PDFN-8(5x6)
Logic-Level
R+O
Vds Max
40V
Id Max
40A
Rds(on)
6mΩ@10V
Vgs(th)
1.5V
Quick Reference
The HD504N075SG is an N-Channel MOSFET in a PDFN-8(5x6) package, manufactured by R+O. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 40A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | PDFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 40A | Max current handling |
| Power Dissipation (Pd) | 34W | Max thermal limit |
| On-Resistance (Rds(on)) | 6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 21nC@10V | Switching energy |
| Input Capacitance (Ciss) | 623pF@20V | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HYG019N06LS1C2 | N-Channel | PDFN-8(5x6) | 60V | 210A | 1.6mΩ@10V | 1.5V | HUAYI 📄 PDF |
| HD506N100SG | N-Channel | PDFN-8(5x6) | 60V | 55A | 13mΩ@10V | 1.8V | R+O 📄 PDF |
| ASDM100R045NQ-R | N-Channel | PDFN-8(5x6) | 100V | 118A | 4.5mΩ@10V | 1.8V | ASDsemi 📄 PDF |
| FH1510GS | N-Channel | PDFN-8(5x6) | 100V | 50A | 8.2mΩ | 1.8V | XIN FEI HONG 📄 PDF |