HCXT5551 Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-89General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
500mW
Gain
300
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Quick Reference

The HCXT5551 is a NPN bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the HCXT5551 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max500mWPower dissipation
Gain300DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
DXT5551-13NPNSOT-89160V600mA1.2W
PXT5551NPNSOT-89160V600mA500mW
CXT5551NPNSOT-89160V600mA500mW
2SC2383NPNSOT-89-160V-
ZXTN4004ZTANPNSOT-89150V1A2W
2SC2383-JSMNPNSOT-89160V1A500mW
CXT5551-JSMNPNSOT-89160V600mA500mW
2SD1007QNPNSOT-89120V700mA2W
2SD2211T100RNPNSOT-89160V1.5A2W
2SC2383NPNSOT-89-160V-
View all SOT-89 NPN Transistors ›