HC1M40120J MOSFET Datasheet & Specifications
N-Channel
TO-263-7L
High-Voltage
HXY MOSFET
Vds Max
1.2kV
Id Max
65A
Rds(on)
40mΩ@18V
Vgs(th)
4V
Quick Reference
The HC1M40120J is an N-Channel MOSFET in a TO-263-7L package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 65A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-263-7L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 65A | Max current handling |
| Power Dissipation (Pd) | 326W | Max thermal limit |
| On-Resistance (Rds(on)) | 40mΩ@18V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 112nC | Switching energy |
| Input Capacitance (Ciss) | 2.766nF | Internal gate capacitance |
| Output Capacitance (Coss) | 125pF | Internal output capacitance |
| Operating Temp | -40℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||