HBCP5316 Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPSOT-223General Purpose
VCEO
80V
Ic Max
1A
Pd Max
1.5W
Gain
25

Quick Reference

The HBCP5316 is a PNP bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the HBCP5316 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max1.5WPower dissipation
Gain25DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FZT951QTAPNPSOT-22360V5A3W
ZX5T951GTAPNPSOT-22360V5.5A3W
FZT792ATAPNPSOT-22370V2A3W
STN951PNPSOT-22360V5A1.6W
BCP53T1GPNPSOT-22380V1.5A1.5W
BCP53-16PNPSOT-223-80V-
DZT2907A-13PNPSOT-22360V600mA1W
DSS60600MZ4-13PNPSOT-22360V6A2W
ZX5T1951GTAPNPSOT-22360V6A3W
SBCP53-10T1GPNPSOT-22380V1.5A1.5W