H2SD1898T100R Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-89General Purpose
VCEO
80V
Ic Max
1A
Pd Max
500mW
Gain
390
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Quick Reference

The H2SD1898T100R is a NPN bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the H2SD1898T100R datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max500mWPower dissipation
Gain390DC current gain
Frequency100MHzTransition speed
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BCX56-16NPNSOT-89-3L80V1A500mW
ZXTN2010ZTANPNSOT-8960V5A2.1W
BCX56-16NPNSOT-89-3L80V1A500mW
2SC5824T100RNPNSOT-8960V3A2W
2STF1360NPNSOT-8960V3A1.4W
BCX56NPNSOT-8980V1A500mW
ZXTN2011ZTANPNSOT-89100V4.5A2.1W
BCX55-16NPNSOT-8960V1A1.3W
BCX56-16NPNSOT-89-3L80V1A500mW
View all SOT-89 NPN Transistors ›