H2SC5658T2LR Datasheet & Equivalents
NPN
SOT-723
General Purpose
HXY MOSFET
VCEO
50V
Ic Max
150mA
Pd Max
100mW
hFE Gain
560
Quick Reference
The H2SC5658T2LR is a NPN bipolar junction transistor in a SOT-723 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 50V and continuous collector current of 150mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-723 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 150mA | Max current handling |
| Power Dissipation (Pd) | 100mW | Max thermal limit |
| DC Current Gain (hFE) | 560 | Base signal amplification ratio |
| Transition Frequency (fT) | 180MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SC6026MFVG | NPN | SOT-723 | 50V | 150mA | 400 | 150mW | TOSHIBA 📄 PDF |
| L3XG | NPN | SOT-723 | 50V | 150mA | 390 | 100mW | HXY MOSFET 📄 PDF |
| 2SC5658T2LQ-HXY | NPN | SOT-723 | 50V | 150mA | 390 | 100mW | HXY MOSFET 📄 PDF |
| BC847BM3T5G-HXY | NPN | SOT-723 | 50V | 150mA | 120 | 150mW | ROHM 📄 PDF |
| 2SC5658T2LR | NPN | SOT-723 | 50V | 150mA | 120 | 150mW | TOSHIBA 📄 PDF |