H2SC3357-RE Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-89General Purpose
VCEO
12V
Ic Max
100mA
Pd Max
1.2W
Gain
250
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Quick Reference

The H2SC3357-RE is a NPN bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 12V breakdown voltage and 100mA continuous collector current. Download the H2SC3357-RE datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO12VBreakdown voltage
IC Max100mACollector current
Pd Max1.2WPower dissipation
Gain250DC current gain
Frequency6.5GHzTransition speed
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SC3357-RFNPNSOT-8912V100mA1.2W
2SC3357-RENPNSOT-8912V100mA1.2W
2SC3357 RENPNSOT-8912V100mA1.2W
BFU580QNPNSOT-8915V100mA1W
BFU580QNPNSOT-8915V100mA1W
ZXTN25012EZTANPNSOT-8912V6.5A2.4W
View all SOT-89 NPN Transistors ›