H2SB1260T100R Datasheet & Equivalents

PNP SOT-89 General Purpose HXY MOSFET
VCEO
80V
Ic Max
1A
Pd Max
500mW
hFE Gain
390

Quick Reference

The H2SB1260T100R is a PNP bipolar junction transistor in a SOT-89 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 80V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)390Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)400mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SB1260-Q PNP SOT-89 80V 1A 390 500mW
2SB1260R PNP SOT-89 80V 1A 390 500mW
BCP53(SOT89-3L) PNP SOT-89 80V 1A 250 1.5W
HXY MOSFET ๐Ÿ“„ PDF
BCX53-JSM PNP SOT-89 80V 1A 250 1.3W
BCX53SQ-16 PNP SOT-89 80V 1A 250 1.3W
BCX53-16 PNP SOT-89 80V 1A 250 1.3W
GOODWORK ๐Ÿ“„ PDF
BCX53-16 PNP SOT-89 80V 1A 250 500mW
FUXINSEMI ๐Ÿ“„ PDF
BCX53-16 PNP SOT-89 80V 1A 250 500mW
YONGYUTAI ๐Ÿ“„ PDF
2SB1260G-Q-AB3-R PNP SOT-89 80V 1A 120 500mW
2SB1260T100Q PNP SOT-89 80V 1A 120 1W
BCX53-16-TP PNP SOT-89 80V 1A 100 500mW
BSR33QTA PNP SOT-89 80V 1A 100 1.5W
DCX53-16-13 PNP SOT-89 80V 1A 100 1W
BCX53-16 PNP SOT-89 80V 1A 100 500mW
BCX53(RANGE:63-250) PNP SOT-89 80V 1A 63 500mW
BCX53-16(RANGE:100-250) PNP SOT-89 80V 1A 63 500mW
BCX53 AH HD PNP SOT-89 80V 1A 40 500mW
Guangdong Hot... ๐Ÿ“„ PDF
LBTP180Y3T1G PNP SOT-89 80V 1A 40 550mW
2SB804 PNP SOT-89 80V 1A 25 2W
BCX53TA PNP SOT-89 80V 1A 25 1.5W