GT060N04D5 MOSFET Datasheet & Specifications

N-Channel DFN-8L(5x6) Logic-Level GOFORD
Vds Max
40V
Id Max
62A
Rds(on)
8.5mΩ@4.5V
Vgs(th)
1.4V

Quick Reference

The GT060N04D5 is an N-Channel MOSFET in a DFN-8L(5x6) package, manufactured by GOFORD. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 62A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerGOFORDOriginal Manufacturer
PackageDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)62AMax current handling
Power Dissipation (Pd)20WMax thermal limit
On-Resistance (Rds(on))8.5mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.4VVoltage required to turn on
Gate Charge (Qg)44nC@10VSwitching energy
Input Capacitance (Ciss)1.276nFInternal gate capacitance
Output Capacitance (Coss)650pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BSC098N10NS5(XBLW) N-Channel DFN-8L(5x6) 100V 75A 6.4mΩ@10V 1.6V
XBLW