GC3M0065090D MOSFET Datasheet & Specifications
N-Channel
TO247-3
Logic-Level
SUPSiC
Vds Max
900V
Id Max
36A
Rds(on)
65mΩ@15V
Vgs(th)
2.1V
Quick Reference
The GC3M0065090D is an N-Channel MOSFET in a TO247-3 package, manufactured by SUPSiC. It supports a drain-source breakdown voltage of 900V and a continuous drain current of 36A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SUPSiC | Original Manufacturer |
| Package | TO247-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 900V | Max breakdown voltage |
| Continuous Drain Current (Id) | 36A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 65mΩ@15V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.1V | Voltage required to turn on |
| Gate Charge (Qg) | 71nC | Switching energy |
| Input Capacitance (Ciss) | 760pF | Internal gate capacitance |
| Output Capacitance (Coss) | 66pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| GC3M0016120D | N-Channel | TO247-3 | 1.2kV | 115A | 16mΩ@15V | 2.5V | SUPSiC 📄 PDF |
| GC3M0021120D | N-Channel | TO247-3 | 1.2kV | 81A | 21mΩ@15V | 2.5V | SUPSiC 📄 PDF |
| GC2M0045170D | N-Channel | TO247-3 | 1.7kV | 72A | 45mΩ@20V | 2.6V | SUPSiC 📄 PDF |