GC3M0015065K MOSFET Datasheet & Specifications
N-Channel
TO-247-4
Logic-Level
SUPSiC
Vds Max
650V
Id Max
120A
Rds(on)
15mΩ@15V
Vgs(th)
2.3V
Quick Reference
The GC3M0015065K is an N-Channel MOSFET in a TO-247-4 package, manufactured by SUPSiC. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SUPSiC | Original Manufacturer |
| Package | TO-247-4 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 416W | Max thermal limit |
| On-Resistance (Rds(on)) | 15mΩ@15V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.3V | Voltage required to turn on |
| Gate Charge (Qg) | 188nC | Switching energy |
| Input Capacitance (Ciss) | 5.011nF | Internal gate capacitance |
| Output Capacitance (Coss) | 289pF | Internal output capacitance |
| Operating Temp | -40℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||