G60N04D52 MOSFET Array Datasheet & Equivalents
N-Channel Array
DFN-8(5x6)
Logic-Level
GOFORD
Vds Max
30V
Id Max
35A
Rds(on)
7mΩ@10V
Vgs(th)
2.5V
Quick Reference
The G60N04D52 is a N-Channel Array in a DFN-8(5x6) package, manufactured by GOFORD. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 35A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOFORD | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 35A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| On-Resistance (Rds(on)) | 7mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 60nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.998nF | Internal gate capacitance |
| Output Capacitance (Coss) | 183pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |