G250N03D2E MOSFET Array Datasheet & Equivalents
N-Channel Array
DFN2x2-6L
Logic-Level
GOFORD
Vds Max
30V
Id Max
7.5A
Rds(on)
21mΩ@10V
Vgs(th)
1V
Quick Reference
The G250N03D2E is a N-Channel Array in a DFN2x2-6L package, manufactured by GOFORD. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 7.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOFORD | Original Manufacturer |
| Package | DFN2x2-6L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.5A | Max current handling |
| Power Dissipation (Pd) | 1.9W | Max thermal limit |
| On-Resistance (Rds(on)) | 21mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 14nC@10V | Switching energy |
| Input Capacitance (Ciss) | 573pF | Internal gate capacitance |
| Output Capacitance (Coss) | 66pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||