G1K8P06S2 MOSFET Array Datasheet & Equivalents
P-Channel Array
SOP-8
Logic-Level
GOFORD
Vds Max
60V
Id Max
3.2A
Rds(on)
140mΩ@10V
Vgs(th)
1.2V
Quick Reference
The G1K8P06S2 is a P-Channel Array in a SOP-8 package, manufactured by GOFORD. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 3.2A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOFORD | Original Manufacturer |
| Package | SOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.2A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 140mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 11.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 594pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| G2K2P10S2E | P-Channel Array | SOP-8 | 100V | 3.5A | 170mΩ@10V | 1.6V | GOFORD 📄 PDF |