G1-MMBT5551 Transistor Datasheet & Specifications

NPN BJT | GOODWORK

NPNSOT-23General Purpose
VCEO
-
Ic Max
160V
Pd Max
600mA
Gain
-55โ„ƒ~+150โ„ƒ

Quick Reference

The G1-MMBT5551 is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including - breakdown voltage and 160V continuous collector current. Download the G1-MMBT5551 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO-Breakdown voltage
IC Max160VCollector current
Pd Max600mAPower dissipation
Gain-55โ„ƒ~+150โ„ƒDC current gain
Frequency300Transition speed
VCEsat300MHzSaturation voltage
Vebo50nAEmitter-Base voltage
Temp300mWOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
KRC105S-RTK/PNPNSOT-23-100mA200mW
FMMT495NPNSOT-23150V1A500mW
MMBT2222ANPNSOT-2340V600mA300mW
ZXTN4240F-7NPNSOT-23-40V2A
FMMT619-JSMNPNSOT-23-50V2A
MMBT5551NPNSOT-23160V600mA225mW
SMMBTA06LT3GNPNSOT-23-80V500mA
NSVMMBTA05LT1GNPNSOT-23-60V500mA
S9018NPNSOT-23-20V50mA
SS8050NPNSOT-2340V1.5A300mW