FZT593TA Datasheet & Equivalents

PNP SOT-223 General Purpose DIODES
VCEO
100V
Ic Max
1A
Pd Max
2W
hFE Gain
100

Quick Reference

The FZT593TA is a PNP bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 100V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCP53-16-AU_R2_000A1 PNP SOT-223 100V 1A 100 2.6W
ZXTP4003GTA PNP SOT-223 100V 1A 60 2W
FZT753TA PNP SOT-223 100V 2A 55 1.6W
FZT705TA PNP SOT-223 120V 2A 3000 2W
FZT956TA PNP SOT-223 200V 2A 100 3W