FSS2305 MOSFET Datasheet & Specifications

P-Channel SOT-23-3L Logic-Level FOSAN
Vds Max
20V
Id Max
4.2A
Rds(on)
60mΩ@4.5V
Vgs(th)
1.5V

Quick Reference

The FSS2305 is an P-Channel MOSFET in a SOT-23-3L package, manufactured by FOSAN. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.2A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.2AMax current handling
Power Dissipation (Pd)1.3WMax thermal limit
On-Resistance (Rds(on))60mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)1.2nFInternal gate capacitance
Output Capacitance (Coss)380pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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20P09L P-Channel SOT-23-3L 20V 9A 18mΩ@4.5V 1V
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SI2343CDS-TP P-Channel SOT-23-3L 30V 5.6A 56mΩ@10V 2V
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NCE40P05Y P-Channel SOT-23-3L 40V 5.3A 73mΩ@10V 1.9V
NCE60P05BY P-Channel SOT-23-3L 60V 5A 85mΩ@4.5V 2V