FQB22P10TM MOSFET Datasheet & Specifications (onsemi, D2PAK)

P-Channel D2PAK Standard Power onsemi
Vds Max
100V
Id Max
22A
Rds(on)
125mΩ@10V
Vgs(th)
4V

Quick Reference

The FQB22P10TM is an P-Channel MOSFET in a D2PAK package, manufactured by onsemi. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 22A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageD2PAKPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)22AMax current handling
Power Dissipation (Pd)125WMax thermal limit
On-Resistance (Rds(on))125mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)50nC@10VSwitching energy
Input Capacitance (Ciss)1.5nFInternal gate capacitance
Output Capacitance (Coss)600pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRF5210STRLPBF P-Channel D2PAK 100V 38A 60mΩ@10V 4V
Infineon 📄 PDF
IRF9540NSTRLPBF P-Channel D2PAK 100V 23A 117mΩ@10V 4V
Infineon 📄 PDF