FMMT593TA Datasheet & Equivalents
PNP
SOT-23
General Purpose
DIODES
VCEO
100V
Ic Max
1A
Pd Max
500mW
hFE Gain
100
Quick Reference
The FMMT593TA is a PNP bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 100V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 200mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |