FDS9926A MOSFET Array Datasheet & Equivalents

N-Channel Array SO-8 Logic-Level onsemi
Vds Max
20V
Id Max
6.5A
Rds(on)
30mΩ@4.5V
Vgs(th)
1.5V

Quick Reference

The FDS9926A is a N-Channel Array in a SO-8 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 6.5A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)6.5AMax current handling
Power Dissipation (Pd)-Max thermal limit
On-Resistance (Rds(on))30mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)6.2nC@4.5VSwitching energy
Input Capacitance (Ciss)650pFInternal gate capacitance
Output Capacitance (Coss)150pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMG6898LSD-13 N-Channel Array SO-8 20V 9.5A 11mΩ@4.5V 1V
DIODES 📄 PDF
SI9926CDY-T1-E3 N-Channel Array SO-8 20V 8A 22mΩ@2.5V 1.5V
VISHAY 📄 PDF
STS10DN3LH5 N-Channel Array SO-8 30V 10A 21mΩ@10V 1V
IRF7313TRPBF N-Channel Array SO-8 30V 6.5A 46mΩ@4.5V 1V
Infineon 📄 PDF
SI4904DY-T1-E3 N-Channel Array SO-8 40V 8A 19mΩ@4.5V 2V
VISHAY 📄 PDF