FDS6890A MOSFET Array Datasheet & Equivalents

N-Channel Array SOIC-8 Logic-Level onsemi
Vds Max
20V
Id Max
7.5A
Rds(on)
22mΩ@2.5V
Vgs(th)
1.5V

Quick Reference

The FDS6890A is a N-Channel Array in a SOIC-8 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 7.5A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOIC-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)7.5AMax current handling
Power Dissipation (Pd)20WMax thermal limit
On-Resistance (Rds(on))22mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)32nC@4.5VSwitching energy
Input Capacitance (Ciss)2.13nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
FDS6898AZ N-Channel Array SOIC-8 20V 9.4A 18mΩ@2.5V 1.5V
onsemi 📄 PDF
STS8DN3LLH5 N-Channel Array SOIC-8 30V 10A 22mΩ@4.5V 1V
STS8DNF3LL N-Channel Array SOIC-8 30V 8A 24mΩ@4.5V 1V