FDS3672 MOSFET Datasheet & Specifications
N-Channel
SO-8
Standard Power
onsemi
Vds Max
100V
Id Max
7.5A
Rds(on)
23mΩ@10V
Vgs(th)
4V
Quick Reference
The FDS3672 is an N-Channel MOSFET in a SO-8 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 7.5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.5A | Max current handling |
| Power Dissipation (Pd) | 2.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 23mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 28nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.015nF | Internal gate capacitance |
| Output Capacitance (Coss) | 285pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMT10H015LSS-13 | N-Channel | SO-8 | 100V | 8.3A | 12mΩ@10V | 2.3V | DIODES 📄 PDF |
| SI4058DY-T1-GE3 | N-Channel | SO-8 | 100V | 10.3A | 26mΩ@10V | 2.8V | VISHAY 📄 PDF |
| FDS3672-NL-VB | N-Channel | SO-8 | 100V | 9A | 32mΩ@10V | 1V | VBsemi Elec 📄 PDF |
| IRF7473TRPBF-VB | N-Channel | SO-8 | 100V | 9A | 32mΩ@10V | 1V | VBsemi Elec 📄 PDF |