FDMC8200S MOSFET Array Datasheet & Equivalents
N-Channel Array
Power-33-8
Logic-Level
onsemi
Vds Max
30V
Id Max
46A
Rds(on)
32mΩ@10V
Vgs(th)
3V
Quick Reference
The FDMC8200S is a N-Channel Array in a Power-33-8 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 46A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | Power-33-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 46A | Max current handling |
| Power Dissipation (Pd) | 2.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 32mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 22nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.436nF | Internal gate capacitance |
| Output Capacitance (Coss) | 495pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |