FDD6685 MOSFET Datasheet & Specifications
P-Channel
TO-252(DPAK)
Logic-Level
onsemi
Vds Max
30V
Id Max
40A
Rds(on)
30mΩ@4.5V
Vgs(th)
3V
Quick Reference
The FDD6685 is an P-Channel MOSFET in a TO-252(DPAK) package, manufactured by onsemi. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 40A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 40A | Max current handling |
| Power Dissipation (Pd) | 52W | Max thermal limit |
| On-Resistance (Rds(on)) | 30mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 17nC@5V | Switching energy |
| Input Capacitance (Ciss) | 1.715nF | Internal gate capacitance |
| Output Capacitance (Coss) | 440pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |