FDC6318P MOSFET Array Datasheet & Equivalents
P-Channel Array
SuperSOT-6
Logic-Level
onsemi
Vds Max
12V
Id Max
2.5A
Rds(on)
200mΩ@1.8V
Vgs(th)
1.5V
Quick Reference
The FDC6318P is a P-Channel Array in a SuperSOT-6 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 12V and a continuous drain current of 2.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SuperSOT-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.5A | Max current handling |
| Power Dissipation (Pd) | 960mW | Max thermal limit |
| On-Resistance (Rds(on)) | 200mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 8nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |