FDC6306P MOSFET Array Datasheet & Equivalents
P-Channel Array
SuperSOT-6
Logic-Level
onsemi
Vds Max
20V
Id Max
1.9A
Rds(on)
170mΩ@4.5V
Vgs(th)
1.5V
Quick Reference
The FDC6306P is a P-Channel Array in a SuperSOT-6 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 1.9A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SuperSOT-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.9A | Max current handling |
| Power Dissipation (Pd) | 960mW | Max thermal limit |
| On-Resistance (Rds(on)) | 170mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 4.2nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 441pF | Internal gate capacitance |
| Output Capacitance (Coss) | 127pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |