FDC6305N MOSFET Array Datasheet & Equivalents
N-Channel Array
TSOT-23-6
Logic-Level
onsemi
Vds Max
20V
Id Max
2.7A
Rds(on)
120mΩ@2.5V
Vgs(th)
1.5V
Quick Reference
The FDC6305N is a N-Channel Array in a TSOT-23-6 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 2.7A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TSOT-23-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.7A | Max current handling |
| Power Dissipation (Pd) | 960mW | Max thermal limit |
| On-Resistance (Rds(on)) | 120mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 5nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 310pF | Internal gate capacitance |
| Output Capacitance (Coss) | 80pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMN2024UVT-7 | N-Channel Array | TSOT-23-6 | 20V | 7A | 28mΩ@2.5V | 900mV | DIODES 📄 PDF |
| DMN2024UVT-13 | N-Channel Array | TSOT-23-6 | 20V | 7A | 28mΩ@2.5V | 900mV | DIODES 📄 PDF |