FDC610PZ-TP MOSFET Datasheet & Specifications

P-Channel SOT-23-6 Logic-Level TECH PUBLIC
Vds Max
30V
Id Max
4.1A
Rds(on)
87mΩ@4.5V
Vgs(th)
3V

Quick Reference

The FDC610PZ-TP is an P-Channel MOSFET in a SOT-23-6 package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 4.1A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-23-6Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)4.1AMax current handling
Power Dissipation (Pd)350mWMax thermal limit
On-Resistance (Rds(on))87mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)700pFInternal gate capacitance
Output Capacitance (Coss)120pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AP3003 P-Channel SOT-23-6 30V 5.8A 38mΩ@4.5V 1.5V
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