FDC608PZ-VB MOSFET Datasheet & Specifications
P-Channel
TSOP-6
Standard Power
VBsemi Elec
Vds Max
30V
Id Max
4.8A
Rds(on)
49mΩ@10V;54mΩ@4.5V
Vgs(th)
-
Quick Reference
The FDC608PZ-VB is an P-Channel MOSFET in a TSOP-6 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 4.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | TSOP-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.8A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 49mΩ@10V;54mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 10nC@10V;5.1nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 450pF | Internal gate capacitance |
| Output Capacitance (Coss) | 80pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI3421DV-T1-GE3 | P-Channel | TSOP-6 | 30V | 8A | 27mΩ@4.5V | 3V | VISHAY 📄 PDF |
| SQ3427AEEV-T1_GE3 | P-Channel | TSOP-6 | 60V | 5.3A | 135mΩ@4.5V | 2.5V | VISHAY 📄 PDF |